Modern power switch: Silicon carbide technology

Over the last fifty years, silicon has been the predominant semiconductor in the world of power electronics. Recently a faster, tougher, and more efficient replacement of pure silicon has been introduced; it is the Silicon Carbide (SiC). Several SiC devices are being developed. These devices include...

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Bibliographic Details
Published in2012 2nd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA) pp. 225 - 230
Main Authors Najjar, J., Khalil, R., Akiki, P., Kanaan, H. Y.
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 01.12.2012
Subjects
driving requirements
JFETs
MOSFET circuits
power applications
principle
Schottky diodes
SiC BJT switches
SiC JBS
SiC JFET switches
SiC MOSFET Switches
SiC technology
Silicon
Silicon carbide
structure
Switches
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Summary:Over the last fifty years, silicon has been the predominant semiconductor in the world of power electronics. Recently a faster, tougher, and more efficient replacement of pure silicon has been introduced; it is the Silicon Carbide (SiC). Several SiC devices are being developed. These devices include Junction Barrier Schottky (JBS) and Schottky Barrier Diodes (SBD), Junction Field Effect Transistor (JFET) and Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET), Bipolar Junction Transistor (BJT). Each one of these devices has different characteristics, structure and properties which make them suitable for many power switching applications. Therefore, a new range of SiC-based power electronics was created.
ISBN:1467324884
9781467324885
DOI:10.1109/ICTEA.2012.6462872