Bipolar resistive switching behaviors of Ag/Si3N4/Pt memory device

The resistive switching behavior of Ag/Si 3 N 4 /Pt device was observed and studied for the first time. Resistance ratio larger than 4*10 2 and 10 4 s retention time were achieved which indicating its potential for resistive switching memory application. A physical model is proposed to explain the r...

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Bibliographic Details
Published in2008 9th International Conference on Solid-State and Integrated-Circuit Technology pp. 925 - 927
Main Authors Sun, B., Liu, L.F., Wang, Y., Han, D.D., Liu, X.Y., Han, R.Q., Kang, J.F.
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 01.10.2008
Subjects
Composite materials
Degradation
Electrodes
Inorganic materials
Microelectronics
Organic materials
Polymer films
Semiconductor materials
Substrates
Voltage
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Summary:The resistive switching behavior of Ag/Si 3 N 4 /Pt device was observed and studied for the first time. Resistance ratio larger than 4*10 2 and 10 4 s retention time were achieved which indicating its potential for resistive switching memory application. A physical model is proposed to explain the resistive switching behaviors of Ag/Si 3 N 4 /Pt devices.
ISBN:9781424421855
1424421853
DOI:10.1109/ICSICT.2008.4734697