Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

We report on a 65 nm Ge pFET with a record performance of I on = 478muA/mum and I off,s = 37nA/mum @V dd = -1V. These improvements are quantified and understood with respect to halo/extension implants, minimizing series resistance and gate stack engineering. A better control of Ge in-diffusion using...

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Bibliographic Details
Published in2008 IEEE International Electron Devices Meeting pp. 1 - 4
Main Authors Mitard, J., De Jaeger, B., Leys, F.E., Hellings, G., Martens, K., Eneman, G., Brunco, D.P., Loo, R., Lin, J.C., Shamiryan, D., Vandeweyer, T., Winderickx, G., Vrancken, E., Yu, C.H., De Meyer, K., Caymax, M., Pantisano, L., Meuris, M., Heyns, M.M.
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 01.12.2008
Subjects
Fabrication
Implants
MOSFET circuits
Passivation
Photonic band gap
Reproducibility of results
Scalability
Temperature distribution
Thickness control
Tin
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Summary:We report on a 65 nm Ge pFET with a record performance of I on = 478muA/mum and I off,s = 37nA/mum @V dd = -1V. These improvements are quantified and understood with respect to halo/extension implants, minimizing series resistance and gate stack engineering. A better control of Ge in-diffusion using a low-temperature epi-silicon passivation process allows achieving 1nm EOT Ge-pFET with increased performance.
ISBN:9781424423774
1424423775
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2008.4796837