Demonstration of CAM and TCAM Using Phase Change Devices

We demonstrate novel designs for Content Addressable Memory (CAM) and Ternary CAM (TCAM) using Phase Change Memory (PCM) technology, which can potentially improve density and power consumption by >;5X as compared with conventional SRAM based implementations. Using Monte-Carlo simulations, we also...

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Bibliographic Details
Published in2011 3rd IEEE International Memory Workshop (IMW) pp. 1 - 4
Main Authors Rajendran, B, Cheek, R W, Lastras, L A, Franceschini, M M, Breitwisch, M J, Schrott, A G, Jing Li, Montoye, R K, Chang, Leland, Chung Lam
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 01.05.2011
Subjects
Arrays
Computer aided manufacturing
FETs
Phase change materials
Programming
Resistance
Resistors
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Summary:We demonstrate novel designs for Content Addressable Memory (CAM) and Ternary CAM (TCAM) using Phase Change Memory (PCM) technology, which can potentially improve density and power consumption by >;5X as compared with conventional SRAM based implementations. Using Monte-Carlo simulations, we also predict the desired characteristics of PCM devices for realizing large, high performance CAM/TCAM chips.
ISBN:1457702258
9781457702259
ISSN:2159-483X
DOI:10.1109/IMW.2011.5873229