B10 finding and correlation to thermal neutron soft error rate sensitivity for SRAMs in the sub-micron technology

In this paper, we report the presence of B10 based on SIMS analysis in SRAM arrays in the 90nm to 45nm technology nodes. The physical presence of B10 correlated very well with the thermal neutron soft error rate (SER) sensitivity of SRAM cells. This result confirmed that without BPSG layer in advanc...

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Bibliographic Details
Published in2010 IEEE International Integrated Reliability Workshop Final Report pp. 31 - 33
Main Authors Shi-Jie Wen, Pai, S Y, Wong, R, Romain, M, Tam, N
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2010
Subjects
B10
Neutrons
Random access memory
Semiconductor device measurement
Sensitivity
SER
Silicon
SIMS
SRAM
thermal neutron
Transistors
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Summary:In this paper, we report the presence of B10 based on SIMS analysis in SRAM arrays in the 90nm to 45nm technology nodes. The physical presence of B10 correlated very well with the thermal neutron soft error rate (SER) sensitivity of SRAM cells. This result confirmed that without BPSG layer in advanced Si technologies, there is still a high possibility of B10 contamination from the Fab process. Furthermore, a root cause of possible B10 source is suggested based on SIMS results.
ISBN:9781424485215
1424485215
ISSN:1930-8841
2374-8036
DOI:10.1109/IIRW.2010.5706480