Global Identification of Variability Factors and Its Application to the Statistical Worst-Case Model Generation

• Published in: 2006 International Conference on Simulation of Semiconductor Processes and Devices pp. 154 - 157
• Main Authors: Eikyu, K., Okagaki, T., Tanizawa, M., Ishikawa, K., Eimori, T., Tsuchiya, O.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.09.2006
• Subjects: Analytical models; Error analysis; FETs; Mass production; Parameter extraction; Phase measurement; Predictive models; Random access memory; Semiconductor device modeling; Semiconductor process modeling

A novel methodology is presented to generate the worst-case model including extraction of its compact model parameters. This method enables physically accurate worst-case prediction in the early stage of device development concurrently. It is found through the intensive TEG analysis and TCAD simulat...