Global Identification of Variability Factors and Its Application to the Statistical Worst-Case Model Generation

A novel methodology is presented to generate the worst-case model including extraction of its compact model parameters. This method enables physically accurate worst-case prediction in the early stage of device development concurrently. It is found through the intensive TEG analysis and TCAD simulat...

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Bibliographic Details
Published in2006 International Conference on Simulation of Semiconductor Processes and Devices pp. 154 - 157
Main Authors Eikyu, K., Okagaki, T., Tanizawa, M., Ishikawa, K., Eimori, T., Tsuchiya, O.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2006
Subjects
Analytical models
Error analysis
FETs
Mass production
Parameter extraction
Phase measurement
Predictive models
Random access memory
Semiconductor device modeling
Semiconductor process modeling
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Summary:A novel methodology is presented to generate the worst-case model including extraction of its compact model parameters. This method enables physically accurate worst-case prediction in the early stage of device development concurrently. It is found through the intensive TEG analysis and TCAD simulation that correlations between process factors have a significant impact on the worst-case corner estimation. A new extraction method of compact model parameters based on error propagation analysis is developed to consider correlations between parameters
ISBN:1424404045
9781424404049
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2006.282861