Versatile TLC NAND flash memory control to reduce read disturb errors by 85% and extend read cycles by 6.7-times of Read-Hot and Cold data for cloud data centers

Versatile Triple-Level-Cell (TLC) NAND flash memory control with Read Hot/Cold Migration, Read Voltage Control and Edge Word Line Protection is proposed for data center application SSDs. Measured errors decrease by 85% and measured acceptable read cycles increase by 6.7-times.

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Bibliographic Details
Published in2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits) pp. 1 - 2
Main Authors Kobayashi, Atsuro, Tokutomi, Tsukasa, Takeuchi, Ken
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2016
Subjects
Flash memories
Measurement uncertainty
Nonvolatile memory
Proposals
Smart phones
Time measurement
Voltage control
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Summary:Versatile Triple-Level-Cell (TLC) NAND flash memory control with Read Hot/Cold Migration, Read Voltage Control and Edge Word Line Protection is proposed for data center application SSDs. Measured errors decrease by 85% and measured acceptable read cycles increase by 6.7-times.
DOI:10.1109/VLSIC.2016.7573505