Effect of ion species for the surface activated bonding of GaAs wafers on the characteristics of the bonded interfaces

Effect of ion species for fast atom beam (FAB) irradiation of surface activated bonding (SAB) of GaAs wafers was investigated by current-voltage (I-V) measurements and transmission electron microscopy (TEM) observations. Ne,Ar,Kr and Xe gases were employed for FAB source. We confirm that it is possi...

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Published in2015 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC) pp. 478 - 481
Main Authors Kono, Genki, Fujino, Masahisa, Yamashita, Daiji, Watanabe, Kentaroh, Sugiyama, Masakazu, Nakano, Yoshiaki, Suga, Tadatomo
Format Conference Proceeding
LanguageEnglish
Japanese
Published The Japan Institute of Electronics Packaging 01.04.2015
Subjects
Bonding
Conductivity
Fast atom beam
GaAs
Gallium arsenide
Iron
Radiation effects
Surface activated bonding
Surface treatment
Wafer direct bonding
Xenon
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Summary:Effect of ion species for fast atom beam (FAB) irradiation of surface activated bonding (SAB) of GaAs wafers was investigated by current-voltage (I-V) measurements and transmission electron microscopy (TEM) observations. Ne,Ar,Kr and Xe gases were employed for FAB source. We confirm that it is possible to reduce the interfacial damage and improve the conductivity of GaAs/GaAs bonded interface by changing the ion species for FAB irradiation.
DOI:10.1109/ICEP-IAAC.2015.7111062