A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

We successfully implemented a one-transistor (1T) ferroelectric field effect transistor (FeFET) eNVM into a 28nm gate-first super low power (28SLP) CMOS technology platform using two additional structural masks. The electrical baseline properties remain the same for the FeFET integration and the JTA...

Full description

Saved in:
Bibliographic Details
Published in2016 IEEE International Electron Devices Meeting (IEDM) pp. 11.5.1 - 11.5.4
Main Authors Trentzsch, M., Flachowsky, S., Richter, R., Paul, J., Reimer, B., Utess, D., Jansen, S., Mulaosmanovic, H., Muller, S., Slesazeck, S., Ocker, J., Noack, M., Muller, J., Polakowski, P., Schreiter, J., Beyer, S., Mikolajick, T., Rice, B.
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 01.12.2016
Subjects
Arrays
Logic gates
Nonvolatile memory
Programming
Switches
Writing
Online AccessGet full text

Cover

More Information
Summary:We successfully implemented a one-transistor (1T) ferroelectric field effect transistor (FeFET) eNVM into a 28nm gate-first super low power (28SLP) CMOS technology platform using two additional structural masks. The electrical baseline properties remain the same for the FeFET integration and the JTAG-controlled 64 kbit memory shows clearly separated states. High temperature retention up to 250 °C is demonstrated and endurance up to 10 5 cycles was achieved. The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.
ISSN:2156-017X
DOI:10.1109/IEDM.2016.7838397