Design of an achievable, all lattice-matched multijunction solar cell using InGaAlAsSb

• Published in: 2011 37th IEEE Photovoltaic Specialists Conference pp. 000122 - 000126
• Main Authors: Walters, R. J., Gonzalez, M., Tischler, J. G., Lumb, M. P., Meyer, J. R., Vurgaftman, I., Abell, J., Yakes, M. K., Ekins-Daukes, N., Adams, J. G. J., Chan, N., Stavrinou, P., Jenkins, P. P.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2011
• Subjects: Indium gallium arsenide; Indium phosphide; Junctions; Photonic band gap; Photovoltaic cells; Resistance
• ISBN: 9781424499663; 1424499666
• ISSN: 0160-8371
• DOI: 10.1109/PVSC.2011.6185859

A design for a realistically achievable, multijunction solar cell based on all lattice-matched materials with >;50% projected efficiencies under concentration is presented. Using quaternary materials such as InAlAsSb and InGaAlAs at stochiometries lattice-matched to InP substrates, direct bandgaps ranging from 0.74eV up to ~1.8eV, ideal for solar energy conversion, can be achieved. In addition, multi-quantum well structures are used to reduce the band-gap further to <;0.7 eV. A triple-junction (3J) solar cell using these materials is described, and in-depth modeling results are presented showing realistically achievable efficiencies of AM1.5D 500X of η ~ 53% and AM0 1 Sun of η~ 37%.