A monolithic approach for Q-band integrated active phased array transmitting antenna

A monolithic design approach for a Q-band integrated active phased array transmitting antenna using InGaAs/GaAs pseudomorphic HEMT (high electron mobility transistor) technology is proposed. Major components, including a high-gain, high-efficiency monolithic amplifier and a three-bit switched line,...

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Bibliographic Details
Published inIEEE Antennas and Propagation Society International Symposium 1992 Digest pp. 126 - 129 vol.1
Main Authors Yen, H.C., Esfandiari, R., Hwang, Y., Tan, K., Liu, C., Aust, M., Carandang, R., Wang, H.
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 1992
Subjects
Antenna arrays
Gallium arsenide
HEMTs
Indium gallium arsenide
MODFETs
Phase shifters
Phased arrays
PHEMTs
Testing
Transmitting antennas
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Summary:A monolithic design approach for a Q-band integrated active phased array transmitting antenna using InGaAs/GaAs pseudomorphic HEMT (high electron mobility transistor) technology is proposed. Major components, including a high-gain, high-efficiency monolithic amplifier and a three-bit switched line, monolithic phase shifter, have been developed and tested. The amplifier measured gain is 19.5 dB with 20% efficiency at 44 GHz. The phase shifter has a measured insertion loss of 7.5 dB and a phase error of less than 7 degrees from 43 to 45 GHz for all phase states. A design of a 2*2 active subarray on GaAs substrate is also presented.< >
ISBN:0780307305
9780780307308
DOI:10.1109/APS.1992.221985