Residual stress of (Pb0.92La0.08)(Zr0.52Ti0.48)O3 films grown by a sol-gel process

• Published in: Smart materials and structures Vol. 22; no. 5
• Main Authors: Ma, Beihai, Liu, Shanshan, Tong, Sheng, Narayanan, Manoj, Koritala, Rachel E, Hu, Zhongqiang, Balachandran, Uthamalingam
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.05.2013; Institute of Physics
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Physics; Chemical bath deposition; Empirical relation; Residual stresses; XRD; Thickness; PLZT; Dielectric losses; Strained layer; Coercive force; Permittivity; Sol-gel process; Ferroelectric thin films; Ferroelectric hysteresis
• ISSN: 0964-1726; 1361-665X
• DOI: 10.1088/0964-1726/22/5/055019

We deposited ferroelectric (Pb0.92La0.08)(Zr0.52Ti0.48)O3 films of 0.35 to 3.1 μm in thickness on platinized silicon substrates by chemical solution deposition. A dielectric constant of 1350 and dielectric loss of 0.04 were measured at room temperature. Hysteresis loop tests revealed that the remanent polarization increases while the coercive field decreases with PLZT film thickness. The residual stress in the PLZT films, as determined by the x-ray diffraction sin2ψ method, decreased from 380 to 200 MPa when the film thickness increased from 0.35 to 3.1 μm. The dependence of the residual stress (σ) on the PLZT film thickness (t) can be described by an empirical equation, σ = A0exp(−t2 λ2), with A0 390 MPa and λ 3.8 μm.