Interface Potential Estimation on VO2/Si Heterojunction by Terahertz Emission Spectroscopy with Temperature Variation

Terahertz emission spectroscopy has shown a lot of advantages in estimating the electric properties of semiconductor devices. In this research, we aim to observe the dynamic interface potential variation from VO 2 /Si heterojunction across the phase transition temperature by terahertz emission spect...

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Bibliographic Details
Published in2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors Yang, Dongxun, Murakami, Fumikazu, Genchi, Shingo, Tanaka, Hidekazu, Tonouchi, Masayoshi
Format Conference Proceeding
LanguageEnglish
Published IEEE 17.09.2023
Subjects
Electric potential
Estimation
Heterojunctions
Semiconductor devices
Silicon
Spectroscopy
Temperature
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Summary:Terahertz emission spectroscopy has shown a lot of advantages in estimating the electric properties of semiconductor devices. In this research, we aim to observe the dynamic interface potential variation from VO 2 /Si heterojunction across the phase transition temperature by terahertz emission spectroscopy and attempt to evaluate the work function of VO 2 film in different phase conditions.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz57677.2023.10298907