Contact resistance of TiW to ultra-thin phase change material layers

In this article we report on the change in contact resistance of TiW to doped-Sb 2 Te in the 5nm-50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb 2 Te. The nature of the interface is characterized by electrical contact...

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Bibliographic Details
Published in2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) pp. 87 - 90
Main Authors Roy, D., Klootwijk, J. H., Gravesteijn, D. J., Wolters, R. A. M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2011
Subjects
Contact resistance
Electrical resistance measurement
Kelvin
Metals
Phase change materials
Space charge
Voltage measurement
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Summary:In this article we report on the change in contact resistance of TiW to doped-Sb 2 Te in the 5nm-50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb 2 Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ρ C . Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb 2 Te interface.
ISBN:9781457707070
1457707071
ISSN:1930-8876
DOI:10.1109/ESSDERC.2011.6044228