Mismatch sources in LDMOS devices

This paper discusses the influence of different sources of DC parametric mismatch in an LDMOS. By comparing measurements and statistical simulations the impact on mismatch of the most important fluctuation causes is qualitatively evaluated. We demonstrate that, whereas the shape of the doping profil...

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Bibliographic Details
Published in2010 Proceedings of the European Solid State Device Research Conference pp. 126 - 129
Main Authors Andricciola, Pietro, Tuinhout, Hans
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2010
Subjects
Correlation
Current measurement
Doping
Interface states
Logic gates
Semiconductor process modeling
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Summary:This paper discusses the influence of different sources of DC parametric mismatch in an LDMOS. By comparing measurements and statistical simulations the impact on mismatch of the most important fluctuation causes is qualitatively evaluated. We demonstrate that, whereas the shape of the doping profile in the channel has little effect, both interface states and series resistances play a major role in the mismatch. This work forms a crucial first step towards a better understanding of the random fluctuation mechanisms present in LDMOS devices used in MMICs.
ISBN:142446658X
9781424466580
ISSN:1930-8876
DOI:10.1109/ESSDERC.2010.5618457