A broadband (1-20 GHz) SiGe monolithic SPDT switch

• Published in: 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu pp. 255 - 258
• Main Authors: Tayrani, R., Teshiba, M., Sakamoto, G.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2002
• Subjects: Applied sciences; Cathodes; Circuit properties; Contact resistance; Design. Technologies. Operation analysis. Testing; Diodes; Doping profiles; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuits; Microwave devices; Radio frequency; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon germanium; Switches; Switching, multiplexing, switched capacity circuits; Performance evaluation; Semiconductor alloys; Shunt; Ge-Si alloys; Third order; Switching; Power consumption; Wide band; Insertion loss; Selector switch; Switching diode; Monolithic integrated circuit; p i n diode; Binary alloy
• ISBN: 9780780374478; 0780374479
• ISSN: 1064-7775; 2379-5638
• DOI: 10.1109/GAAS.2002.1049072

This paper reports the performances of a broadband monolithic SiGe PIN diode SPDT switch that is based on the IBM 5-HP SiGe foundry process. The switch contains a tightly integrated series-shunt vertical PIN structure in each arm having a junction area of 50 /spl mu/m/sup 2/ and 80 /spl mu/m/sup 2/ respectively. On-chip resistive bias networks are used to ensure broadband operation. The switch "ON" arm demonstrates a path-loss of less than 1.3 dB while its "OFF" arm maintains an isolation of greater than 40 dB across 1-20 GHz. The total DC power consumption for maintaining such a high performance is only 22 mW. The switching speed, the 1-dB insertion loss compression point and the third order intercept point were found to be <1 nsec, 19 dBm, and 30.0 dBm respectively.