High voltage Schottky barrier diodes in synthetic single crystal diamond

• Published in: 2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748) Vol. 2; pp. 385 - 388 vol.2
• Main Authors: Brezeanu, M., Rashid, S.J., Butler, T., Rupesinghe, N.L., Udrea, F., Okano, K., Amaratunga, G.A.J., Twitchen, D.J., Tajani, A., Wort, C., Garraway, A., Coubeck, L., Taylor, P., Hasko, D.G.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2004
• Subjects: Applied sciences; Boron; Crystalline materials; Diodes; Doping; Electronics; Exact sciences and technology; Gold; Inorganic materials; Optical materials; Optoelectronic devices; Photodetectors; Schottky barriers; Schottky diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Voltage; Optical beam; Ultraviolet detector; High voltage; p type semiconductor; Synthetic diamond; Doping; Optoelectronic device; Schottky barrier diode; Photodetector; Optical density
• ISBN: 9780780384996; 0780384997
• DOI: 10.1109/SMICND.2004.1403025

Recent results proved the possibility of obtaining synthetic single crystal diamond with good crystal quality and excellent consistency. High voltage p-type Schottky barrier diodes (SBDs) have been fabricated on diamond, using gold (Au) as the Schottky metal and boron as doping material. In this study, on-state and off-state experimental and simulated data are presented and excellent theory-experiment agreement is revealed. The usage of diamond SBDs as ultra violet (UV) photodetectors is also analysed. On-state and off-state simulations, for different optical beam power densities, have been carried out and the theoretical data are provided.