On the modeling of transient diffusion and activation of boron during post-implantation annealing

• Published in: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 pp. 967 - 970
• Main Authors: Pichler, P., Ortiz, C.J., Colombeau, B., Cowern, N.E.B., Lampin, E., Claverie, A., Cristiano, F., Lerch, W., Paul, S.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2004
• Subjects: Annealing; Applied sciences; Boron; Calibration; Compound structure devices; Electronics; Exact sciences and technology; Genetic algorithms; Implants; Ion implantation; Lead compounds; Predictive models; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor process modeling; Silicon; Annealing; Interstitial; Modeling; Shallow junction
• ISBN: 0780386841; 9780780386846
• DOI: 10.1109/IEDM.2004.1419347

A quantitative description of the transient diffusion and activation of boron during post-implantation annealing steps is one of the most challenging tasks. In industrially relevant situation, it needs to address diffusion at extrinsic concentrations, the agglomeration of self-interstitials, and the formation of boron-interstitial clusters. This article describes the experimental work performed or used to calibrate model parameters as independently as possible. The combined model is then applied to ultra-shallow junction formation by annealing boron implanted into crystalline or preamorphized silicon.