Manufacturable embedded CMOS 6T-SRAM technology with high-k gate dielectric device for system-on-chip applications

• Published in: Digest. International Electron Devices Meeting pp. 423 - 426
• Main Authors: Oh, C.B., Kang, H.S., Ryu, H.J., Oh, M.H., Jung, H.S., Kim, Y.S., He, J.H., Lee, N.I., Cho, K.H., Lee, D.H., Yang, T.H., Cho, I.S., Kang, H.K., Kim, Y.W., Suh, K.P.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2002
• Subjects: Acoustic wave devices, piezoelectric and piezoresistive devices; Applied sciences; CMOS technology; Design. Technologies. Operation analysis. Testing; Electronics; Electronics industry; Exact sciences and technology; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Integrated circuits; Integrated circuits by function (including memories and processors); Leakage current; Manufacturing; Semiconductor device manufacture; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SRAM chips; System-on-a-chip; Gate current; SRAM chips; Complementary MOS technology; Random access memory; Integrated circuit; Nitriding; Leakage current; System on a chip; Low-power electronics; Dielectric devices
• ISBN: 9780780374621; 0780374622
• DOI: 10.1109/IEDM.2002.1175869

Manufacturable embedded CMOS 6T-SRAM with the HfO/sub 2/-Al/sub 2/O/sub 3/ dielectric for system-on-chip (SoC) applications is successfully demonstrated for the first time in the semiconductor industry. The possibility of the high-k gate dielectric in low power SoC applications is suggested. 0.11/spl mu/m NFET and PFET devices with thin high-k gate dielectric have 470 and 150/spl mu/A//spl mu/m at Ioff=0.1nA/um and Vdd=1.2V, respectively. Inversion thickness of NFET and PFET are 2.4nm and 2.7nm, respectively. Gate leakage current of the high-k is 1000 times lower than that of the oxynitride at the accumulation region. Static noise margin of 2.14/spl mu/m/sup 2/ 6T-SRAM bit cell is about 300mV at Vdd=1.2V. 6T-SRAM chip yield of the high-k is comparable to that of the oxynitride. The post nitridation after high-k film deposition is very important to the yield of the SRAM chips due to the suppression of the PFET boron penetration. Stand-by current of the SRAM chips with the high-k is shown to be a decreases of 60% compared with the oxynitride.