Plasma-activated bonding, controlled cleave process, and non-contact smoothing for Germanium-on-Insulator (GeOI) manufacturing

• Published in: 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573) pp. 65 - 66
• Main Authors: Kirk, H.R., Lamm, A., Paler, A., Ong, P.J., Malik, I.J., Kang, S., Henley, F.J.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2004
• Subjects: Applied sciences; Bonding; Charge carrier processes; Design. Technologies. Operation analysis. Testing; Dielectric substrates; Electronics; Exact sciences and technology; High K dielectric materials; Integrated circuit manufacture; Integrated circuits; Manufacturing processes; Plasma materials processing; Process control; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon on insulator technology; Smoothing methods; Transistors; Silicon on insulator technology; Semiconductor alloys; High strength current; Energy gap; Silicon germanium on insulator technology; Integrated circuit; Strained layer; Hole mobility; Transistor; Leakage current; High k dielectric; Germanium on insulator technology
• ISBN: 0780384970; 9780780384972
• DOI: 10.1109/SOI.2004.1391557

Transistor scaling limitations require profound changes in materials systems used to manufacture future generations of integrated circuits. Germanium-on-Insulator (GeOI) substrates have been proposed as one method to overcome the limitations of silicon and silicon on insulator substrates (SOI). GeOI substrates offer the advantages of the high electron and hole mobilities while at least partially overcoming the high leakage currents inherent to the small band gap of germanium. In addition, GeOI has been found to be compatible with high k gate dielectrics, GeOI is now joining silicon-based materials, including SOI, strained silicon (s-Si), strained silicon on SiGe on insulator (SGOI), or strained silicon on insulator s-SOI as potential next-generation engineered substrates.