Contact Optimization Through Annealing and Edge Functionalization Towards 2D TMD Nanosheet Devices

Combining top and edge contact in nanosheet devices based on 2D-TMD is desired. Optimization of the edge contact and particularly its interface becomes ever more important. We demonstrated more than seven-fold enhancement in on-performance can be achieved through edge functionalization using in-situ...

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Bibliographic Details
Published in2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) pp. 1 - 2
Main Authors Li, Meng-Zhan, Hung, Terry Y.T., Yun, Wei Sheng, Chou, Sui An, Hsu, Chen-Feng, Lee, T.Y., Cheng, Chao-Ching, Radu, Iuliana P., Lin, Minn-Tsong
Format Conference Proceeding
LanguageEnglish
Published IEEE 22.04.2024
Subjects
Annealing
Nanoscale devices
Nitrogen
Optimization
Plasmas
Very large scale integration
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Summary:Combining top and edge contact in nanosheet devices based on 2D-TMD is desired. Optimization of the edge contact and particularly its interface becomes ever more important. We demonstrated more than seven-fold enhancement in on-performance can be achieved through edge functionalization using in-situ nitrogen plasma. Thermal annealing, on the other hand, shows more than four times current improvement in stacked bilayer channel.
DOI:10.1109/VLSITSA60681.2024.10546402