Solution-Processed Organic CMOS Inverter via Contact Modulation
Organic field-effect transistors (OFETs) have been widely studied, yet realizing complementary metal-oxide-semiconductor (CMOS) integrated circuits still poses significant challenges. Here, we use a single layer of ambipolar polymer organic semiconductor (OSC) to achieve solution-processable organic...
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Published in | 2024 Conference of Science and Technology for Integrated Circuits (CSTIC) pp. 1 - 3 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
17.03.2024
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Subjects | |
Online Access | Get full text |
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Summary: | Organic field-effect transistors (OFETs) have been widely studied, yet realizing complementary metal-oxide-semiconductor (CMOS) integrated circuits still poses significant challenges. Here, we use a single layer of ambipolar polymer organic semiconductor (OSC) to achieve solution-processable organic CMOS inverters by modulating the metal-semiconductor contacts so as to reduce the Schottky barriers for N/P MOS respectively. Ti-contacted (Titanium) N-type OFETs and Au-contacted (gold) P-type OFETs are fabricated on the same substrate. This technology not only presents the advantages of low cost and large-scale integration but also possesses a straightforward processing method, providing a promising solution to the realization of organic CMOS circuits. |
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DOI: | 10.1109/CSTIC61820.2024.10532112 |