Vth-shiftable SRAM cell TEGs for direct measurement for the immunity of the threshold voltage variability

We developed VTSTs for 6T-SRAM and RL-SRAM and evaluated them to investigate the influences of SRAM operation by Vth fluctuation using measured FCMs and CΔVths. As a result, we successfully confirmed the superior immunity of Vth fluctuation of the RL-SRAM than the 6T-SRAM.

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Bibliographic Details
Published in2017 International Conference of Microelectronic Test Structures (ICMTS) pp. 1 - 3
Main Authors Yamaguchi, Shogo, Imi, Hitoshi, Tokumaru, Shogo, Kondo, Takahiro, Yamamoto, Hiromasa, Nakamura, Kazuyuki
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2017
Subjects
Conferences
Frequency control
Microelectronics
MOSFET
SRAM cells
Voltage measurement
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Summary:We developed VTSTs for 6T-SRAM and RL-SRAM and evaluated them to investigate the influences of SRAM operation by Vth fluctuation using measured FCMs and CΔVths. As a result, we successfully confirmed the superior immunity of Vth fluctuation of the RL-SRAM than the 6T-SRAM.
ISSN:2158-1029
DOI:10.1109/ICMTS.2017.7954265