Self-Powered Fast Response X-Ray Detector Based on Vertical p-NiO/Ga2O3 Heterojunction Diode

• Published in: IEEE photonics technology letters Vol. 36; no. 4; p. 1
• Main Authors: Zhang, Silong, Deng, Yuxin, Chen, Liang, Zhou, Leidang, Lu, Xing, Wang, Fangbao, Du, Xue, Li, Yang, He, Shiyi, Ouyang, Xiaoping
• Format: Journal Article
• Language: English
• Published: New York IEEE 15.02.2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Atomic properties; Carrier density; Detectors; Diodes; Electron tubes; Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3; Gallium oxides; heterojunction diode; Heterojunctions; Nickel oxides; P-n junctions; Physical properties; Schottky diodes; Sensors; Switches; Transient response; X ray detectors; X-rays

Ga 2 O 3 , as an ultra-wide band gap material with physical properties such as large atomic number, low intrinsic carrier density, and high irradiation tolerance, has shown great potential in X-ray detection. This paper reports a self-powered X-ray detector based on vertical p-NiO/Ga 2 O 3 heterojun...