Self-Powered Fast Response X-Ray Detector Based on Vertical p-NiO/Ga2O3 Heterojunction Diode

Ga 2 O 3 , as an ultra-wide band gap material with physical properties such as large atomic number, low intrinsic carrier density, and high irradiation tolerance, has shown great potential in X-ray detection. This paper reports a self-powered X-ray detector based on vertical p-NiO/Ga 2 O 3 heterojun...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 36; no. 4; p. 1
Main Authors Zhang, Silong, Deng, Yuxin, Chen, Liang, Zhou, Leidang, Lu, Xing, Wang, Fangbao, Du, Xue, Li, Yang, He, Shiyi, Ouyang, Xiaoping
Format Journal Article
LanguageEnglish
Published New York IEEE 15.02.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:Ga 2 O 3 , as an ultra-wide band gap material with physical properties such as large atomic number, low intrinsic carrier density, and high irradiation tolerance, has shown great potential in X-ray detection. This paper reports a self-powered X-ray detector based on vertical p-NiO/Ga 2 O 3 heterojunction diodes (HJDs). Benefiting from the high quality and high built-in potential of the p-n heterojunction, the HJD detector exhibited a pronounced photovoltaic response to X-rays at 0 V with a sensitivity of 212 nC·Gy -1 ·cm -2 and a fast response time of less than 0.02 s in transient X-ray response measurements, which was much faster than that of the reported Ga 2 O 3 Schottky barrier diode (SBD) detector. The power-voltage ( P-V ) test indicated that the device conformed to typical photovoltaic characteristics with a maximum output power of 2.95 nW Moreover, the HJD detector showed a good linear property to various X-ray dose rates from 0.0383 Gy -1 ·s -1 to 1.149 Gy -1 ·s -1 .
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2023.3348869