Self-Powered Fast Response X-Ray Detector Based on Vertical p-NiO/Ga2O3 Heterojunction Diode
Ga 2 O 3 , as an ultra-wide band gap material with physical properties such as large atomic number, low intrinsic carrier density, and high irradiation tolerance, has shown great potential in X-ray detection. This paper reports a self-powered X-ray detector based on vertical p-NiO/Ga 2 O 3 heterojun...
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Published in | IEEE photonics technology letters Vol. 36; no. 4; p. 1 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
15.02.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | Ga 2 O 3 , as an ultra-wide band gap material with physical properties such as large atomic number, low intrinsic carrier density, and high irradiation tolerance, has shown great potential in X-ray detection. This paper reports a self-powered X-ray detector based on vertical p-NiO/Ga 2 O 3 heterojunction diodes (HJDs). Benefiting from the high quality and high built-in potential of the p-n heterojunction, the HJD detector exhibited a pronounced photovoltaic response to X-rays at 0 V with a sensitivity of 212 nC·Gy -1 ·cm -2 and a fast response time of less than 0.02 s in transient X-ray response measurements, which was much faster than that of the reported Ga 2 O 3 Schottky barrier diode (SBD) detector. The power-voltage ( P-V ) test indicated that the device conformed to typical photovoltaic characteristics with a maximum output power of 2.95 nW Moreover, the HJD detector showed a good linear property to various X-ray dose rates from 0.0383 Gy -1 ·s -1 to 1.149 Gy -1 ·s -1 . |
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ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2023.3348869 |