Temperature Dependence of Quasi-Ballistic Transport in n-Type and p-Type Nanosheets

The performance of nanosheets with a gate length of 14 nm is investigated by Monte Carlo (MC) and drift-diffusion (DD) simulation between 77 K and 400 K. Increasing at fixed workfunction the temperature from 300 K to 400 K leads for MC to an on-current (ION) increase as opposed to a reduction in DD....

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Bibliographic Details
Published in2024 IEEE Latin American Electron Devices Conference (LAEDC) pp. 1 - 4
Main Authors Bufler, F. M., Vermeersch, B., Mishra, S., Beckers, A., Ritzenthaler, R., Grill, A., Matagne, P., Hellings, G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 08.05.2024
Subjects
cold CMOS
cryogenic temperatures
Degradation
Monte Carlo
Monte Carlo methods
nanosheet
Performance evaluation
Phonons
Scattering
self-heating
Semiconductor device modeling
Temperature dependence
zero-temperature coefficient (ZTC)
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Summary:The performance of nanosheets with a gate length of 14 nm is investigated by Monte Carlo (MC) and drift-diffusion (DD) simulation between 77 K and 400 K. Increasing at fixed workfunction the temperature from 300 K to 400 K leads for MC to an on-current (ION) increase as opposed to a reduction in DD. This is related to the quasi-ballistic regime which involves little phonon scattering reducing the temperature-induced penalty in contrast to a strong phonon-limited mobility degradation in DD. The same physics yields below 300 K to a stronger ION improvement for DD than for MC. In addition, the subthreshold swing is below 300 K for MC substantially worse than for DD. These results will have a strong impact on the thermal limitations of chip operation and the viability of cold CMOS.
ISSN:2835-3471
DOI:10.1109/LAEDC61552.2024.10555663