The Historical Development Of Non-Planar Devices

The history of the evolution of non-planar devices leading to the practical use of 3-dimensional device structures, which gave rise to the major change in the MOSFET structure from planar to today's FinFETs, is reviewed. FinFETs were created by combining research on the operating mechanisms of...

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Bibliographic Details
Published in2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) pp. 1 - 2
Main Author Hisamoto, Digh
Format Conference Proceeding
LanguageEnglish
Published IEEE 22.04.2024
Subjects
Double-gate FETs
FinFETs
Fluctuations
Impurities
Threshold voltage
Very large scale integration
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Summary:The history of the evolution of non-planar devices leading to the practical use of 3-dimensional device structures, which gave rise to the major change in the MOSFET structure from planar to today's FinFETs, is reviewed. FinFETs were created by combining research on the operating mechanisms of double-gate FET devices with research on non-planar device structures. The history of research in each field up to the beginning of FinFETs was traced using the naming of FET devices as a clue.
DOI:10.1109/VLSITSA60681.2024.10546441