Hybrid o-band electro-absorption modulators on multi-micron waveguide silicon photonics platform for optical engine applications

• Published in: 45th European Conference on Optical Communication (ECOC 2019) p. 119
• Main Authors: Srinivasan, P, Muth, K, Masuda, K, Alalusi, M, Steinbach, S, Ziebell, M, Trita, A, Hua Yang, Peters, F, Zilkie, A
• Format: Conference Proceeding
• Language: English
• Published: Stevenage, UK IET 2019; The Institution of Engineering & Technology
• Subjects: Absorption; Electro-optical devices; Electroabsorption modulators; Integrated optoelectronics; Modulation and coding methods; Optical beam modulators; Optical communication devices, equipment and systems; Optical communication equipment; Optical waveguides; Optical waveguides and couplers; Other optical system components; Photonics; Silicon; U bends; Waveguides; pulse amplitude modulation; U-bend ridge-waveguide configuration; indium compounds; electroabsorption; integrated optoelectronics; optical waveguides; silicon chip; silicon photonics hybrid O-band electro-absorption modulator; optical engine applications; elemental semiconductors; silicon; ridge waveguides; electro-optical modulation; bit rate 106 Gbit/s; multimicron waveguide silicon photonics platform; hybrid o-band electro-absorption modulators; optical communication equipment; single-sided coupling; PAM-4 performance; InP-Si; InP-based devices; III-V semiconductors
• ISBN: 1839531851; 9781839531859
• DOI: 10.1049/cp.2019.0853

We demonstrate a silicon photonics hybrid O-band electro-absorption modulator in a multi-micron waveguide platform. Modulation is achieved in the InP-based devices with a U-bend ridge-waveguide configuration for single-sided coupling to the silicon chip. 106Gb/s PAM-4 performance at varying temperatures up to 70C is demonstrated.