Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET
In this work, a normally-OFF <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga2O3 MOSFET enabled by charge trapping layer (CTL) is demonstrated for the first time. The CTL consists of Al:HfO<inline-formula> <tex-math notation...
Saved in:
Published in | IEEE transactions on electron devices Vol. 70; no. 6; pp. 3191 - 3195 |
---|---|
Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.06.2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | In this work, a normally-OFF <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga2O3 MOSFET enabled by charge trapping layer (CTL) is demonstrated for the first time. The CTL consists of Al:HfO<inline-formula> <tex-math notation="LaTeX">_{x} 1 </tex-math></inline-formula>:5 and the tunneling barrier (TB) is Al2O3/HfOx/Al2O3 stack. The developed Ga2O3 MOSFET exhibits a wide <inline-formula> <tex-math notation="LaTeX">{V}_{\text {th}} </tex-math></inline-formula> tuning range to normally-OFF operation and a long-lasting retention characteristic of −0.3 V (ten years). The device obtains a breakdown voltage (BV) of 1815 V, showing high reverse blocking capability based on the proposed CTL technique. <inline-formula> <tex-math notation="LaTeX">{I} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> analyses are carried out under various temperatures to study the mechanism and explore the charge trapping and de-trapping processes. The results indicate a promising method to achieve E-mode operation for Ga2O3 MOSFET with low charge loss and stable <inline-formula> <tex-math notation="LaTeX">{V}_{\text {th}} </tex-math></inline-formula>. |
---|---|
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2023.3267758 |