A Novel Approach to Modeling Insulator Wave-Function Penetration and Interface Roughness Scattering in MOSFETs

We present novel models for insulator wave-function penetration and for interface roughness scattering. We review the intricate relationship between modeling of these two effects, with respect to usability, computational effort, and numerical stability. We demonstrate that our novel approach is capa...

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Bibliographic Details
Published inESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) pp. 273 - 276
Main Authors Stanojevic, Zlatan, Hung, Lee-Chi, Tsai, Chen-Ming, Karner, Markus
Format Conference Proceeding
LanguageEnglish
Published IEEE 19.09.2022
Subjects
Analytical models
carrier mobility
CMOS
Computational modeling
device simulation
Insulators
Mathematical models
MOSFET
roughness scattering
Scattering
Schrödinger-Poisson
Surface waves
TCAD
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Summary:We present novel models for insulator wave-function penetration and for interface roughness scattering. We review the intricate relationship between modeling of these two effects, with respect to usability, computational effort, and numerical stability. We demonstrate that our novel approach is capable of remedying all of the common issues of previous approaches at no additional computational cost.
DOI:10.1109/ESSDERC55479.2022.9947117