Silicon Application Extension Versus WBG Due to Partial Power Processing

This paper discusses the new possibilities that partial power processing offers to implement silicon semiconductors compared to wide-bandgap technologies. With this purpose, an on-board charger application is presented as a case study in which wide-bandgap semiconductors based full power converters...

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Bibliographic Details
Published in2022 IEEE Applied Power Electronics Conference and Exposition (APEC) pp. 1631 - 1636
Main Authors Anzola, Jon, Sharma, Shrivatsal, Aizpuru, Iosu, Bhattacharya, Subhashish
Format Conference Proceeding
LanguageEnglish
Published IEEE 20.03.2022
Subjects
Costs
dual active bridge
Energy loss
partial power processing
Resistance
Silicon
Silicon carbide
Switches
Switching loss
Voltage
wide-bandgap
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Summary:This paper discusses the new possibilities that partial power processing offers to implement silicon semiconductors compared to wide-bandgap technologies. With this purpose, an on-board charger application is presented as a case study in which wide-bandgap semiconductors based full power converters are compared with silicon semiconductors based partial power converters. The comparison is made using the total energy loss over a complete charge cycle. The total energy loss is calculated using the switching loss and conduction loss of the devices. The zero-voltage switching regions for both full power and partial power topologies are also considered while calculating switching losses. Using circuit simulations, it is concluded that the partial power processing converters with silicon based devices have better efficiency and reduced cost than full power converters with wide-bandgap based devices.
ISSN:2470-6647
DOI:10.1109/APEC43599.2022.9773605