Direct Measurement of Internal and External Quantum Efficiency in InGaN Quantum-Well Active Layers

Internal quantum efficiency (IQE) in InGaN quantum-well active layers have been estimated by simultaneous photoacoustic and photoluminescence measurements. Furthermore, external quantum efficiency has been estimated for the same samples by the integrating-sphere method, and the results have been com...

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Bibliographic Details
Published in2021 27th International Semiconductor Laser Conference (ISLC) pp. 1 - 2
Main Authors Mori, Keito, Takahashi, Yuchi, Sakai, Shigeta, Morimoto, Yuya, Yamaguchi, Atsushi A., Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tomiya, Shigetaka
Format Conference Proceeding
LanguageEnglish
Published IEEE 10.10.2021
Subjects
Measurement by laser beam
Photoluminescence
Quantum wells
Semiconductor device measurement
Semiconductor lasers
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Summary:Internal quantum efficiency (IQE) in InGaN quantum-well active layers have been estimated by simultaneous photoacoustic and photoluminescence measurements. Furthermore, external quantum efficiency has been estimated for the same samples by the integrating-sphere method, and the results have been compared with IQE values.
ISSN:1947-6981
DOI:10.1109/ISLC51662.2021.9615797