Facile formation of self-assembled Ga droplets on GaAs (001) substrate

We investigate the formation and evolution of Ga droplets over GaAs (001) substrate with and without Ge top layer (8 nm). Various morphological transformation from holes to droplets formation were observed as a function of annealing parameters. It was observed that the application of Ge layer plays...

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Bibliographic Details
Published in2021 International Semiconductor Conference (CAS) pp. 35 - 38
Main Authors Sultan, M. T., Arnason, H. O., Ingvarsson, S., Arnalds, U. B., Svavarsson, H. G., Manolescu, A., Valfells, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 06.10.2021
Subjects
Costs
Ga droplet
Gallium arsenide
Germanium
Photoelectricity
Rapid thermal annealing
RTA
SEM
Structural engineering
Surface morphology
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Summary:We investigate the formation and evolution of Ga droplets over GaAs (001) substrate with and without Ge top layer (8 nm). Various morphological transformation from holes to droplets formation were observed as a function of annealing parameters. It was observed that the application of Ge layer plays a vital role in incorporating oxygen into the system. Moreover, a potential application of these structures as a photocathode is discussed, demonstrating increased photoemission.
ISSN:2377-0678
DOI:10.1109/CAS52836.2021.9604129