Characterization-oriented design of E-band Variable-Gain Amplifiers in BiCMOS technology

Design and characterization of both a single-stage and a 2-stage Variable Gain Amplifier operating at E- Band is presented. Characterization issues of differential RF amplifiers are discussed, and integrated input and output baluns seem to be an easy solution for on-chip or on-board preliminary char...

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Bibliographic Details
Published in2022 Microwave Mediterranean Symposium (MMS) pp. 1 - 4
Main Authors Amendola, G., Boccia, L., Centurelli, F., Ciccognani, W., Limiti, E., Mustacchio, C., Tommasino, P., Trifiletti, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 09.05.2022
Subjects
Backhaul
Baluns
BiCMOS integrated circuits
E-band
Gain control
Gain measurement
Radio frequency
Scattering parameters
SiGe
System-on-chip
Variable gain amplifier
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Summary:Design and characterization of both a single-stage and a 2-stage Variable Gain Amplifier operating at E- Band is presented. Characterization issues of differential RF amplifiers are discussed, and integrated input and output baluns seem to be an easy solution for on-chip or on-board preliminary characterization by standard 2-port Network Analyzer. Amplifiers have been prototyped in a SiGe BiCMOS commercial technology, and exhibit about 22 dB of gain control range. After balun de-embedding, more than 10 dB of maximum gain has been also demonstrated for both amplifiers.
ISSN:2157-9830
DOI:10.1109/MMS55062.2022.9825549