Photoresponse of InGaAsP-based p-doped quantum well infrared photodetectors

• Published in: 1997 21st International Conference on Microelectronics. Proceedings Vol. 1; pp. 315 - 318 vol.1
• Main Authors: Tadic, M., Jelen, C., Slivken, S., Razeghi, M.
• Format: Conference Proceeding
• Language: English
• Published: New York NY IEEE 1997
• Subjects: Applied sciences; Displays; Effective mass; Electromagnetic wave absorption; Electronics; Electrons; Exact sciences and technology; Gallium arsenide; Optoelectronic devices; Photodetectors; Quantum mechanics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; USA Councils; Virtual colonoscopy; Wavelength measurement; Gallium Arsenides; Quantum well; Quaternary compound; Indium Phosphides; Photodetector; Optical absorption
• DOI: 10.1109/ICMEL.1997.625258
• ISBN: 078033664X; 9780780336643

Absorption in p-doped quantum well infrared photodetectors (QWIPs) based on InGaAsP alloys is measured and theoretically explained. It is noticed that the small spin-orbit splitting in InGaAsP alloys considerably affects the absorption spectrum. Very good agreement between the experimental and theoretical results is obtained, in respect of both the position of the peak of the responsivity and the cut-off wavelength. The experimental data displays the absorption in the 3-5 /spl mu/m window, while the calculation predicts two peaks, for one of them the split-off band being responsible.