Photoresponse of InGaAsP-based p-doped quantum well infrared photodetectors

Absorption in p-doped quantum well infrared photodetectors (QWIPs) based on InGaAsP alloys is measured and theoretically explained. It is noticed that the small spin-orbit splitting in InGaAsP alloys considerably affects the absorption spectrum. Very good agreement between the experimental and theor...

Full description

Saved in:
Bibliographic Details
Published in1997 21st International Conference on Microelectronics. Proceedings Vol. 1; pp. 315 - 318 vol.1
Main Authors Tadic, M., Jelen, C., Slivken, S., Razeghi, M.
Format Conference Proceeding
LanguageEnglish
Published New York NY IEEE 1997
Subjects
Applied sciences
Displays
Effective mass
Electromagnetic wave absorption
Electronics
Electrons
Exact sciences and technology
Gallium arsenide
Optoelectronic devices
Photodetectors
Quantum mechanics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
USA Councils
Virtual colonoscopy
Wavelength measurement
Gallium Arsenides
Quantum well
Quaternary compound
Indium Phosphides
Photodetector
Optical absorption
Online AccessGet full text

Cover

More Information
Summary:Absorption in p-doped quantum well infrared photodetectors (QWIPs) based on InGaAsP alloys is measured and theoretically explained. It is noticed that the small spin-orbit splitting in InGaAsP alloys considerably affects the absorption spectrum. Very good agreement between the experimental and theoretical results is obtained, in respect of both the position of the peak of the responsivity and the cut-off wavelength. The experimental data displays the absorption in the 3-5 /spl mu/m window, while the calculation predicts two peaks, for one of them the split-off band being responsible.
ISBN:078033664X
9780780336643
DOI:10.1109/ICMEL.1997.625258