SiOx Tunneling Diode Arrays With Uniform Electron Emission

Uniform electron emission (EE) from on-chip micro-emitter arrays based on SiO x tunneling diodes (STDs) in electroformed SiO x is reported. EE from STDs is found to be accompanied with visible light emission, which enables us to resolve the spatial distribution of EE from the micro-emitter arrays an...

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Bibliographic Details
Published inIEEE electron device letters Vol. 43; no. 8; pp. 1339 - 1342
Main Authors Zhan, Fangyuan, Yang, Wei, Li, Zhiwei, He, Yidan, Yu, Panpan, Wang, Bingjie, Wei, Xianlong
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2022
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Arrays
Electroforming
Electron emission
Emitters
Graphene
Light emission
micro-emitter array
Nanoscale devices
On-chip electron source
Optical arrays
Optical imaging
Silicon
silicon oxide
Spatial distribution
Stimulated emission
Tunnel diodes
Tunneling
tunneling diode
uniform emission
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Summary:Uniform electron emission (EE) from on-chip micro-emitter arrays based on SiO x tunneling diodes (STDs) in electroformed SiO x is reported. EE from STDs is found to be accompanied with visible light emission, which enables us to resolve the spatial distribution of EE from the micro-emitter arrays and emitter-to-emitter uniformity at the microscale resolution via optical imaging. Up to 99% micro-emitters in a 15 <inline-formula> <tex-math notation="LaTeX">\times15 </tex-math></inline-formula> array is observed to work simultaneously with good emitter-to-emitter uniformity, showing an emission current of 0.56 mA and an emission density of 626 mA/cm 2 . The good uniformity is attributed to the insensitivity of EE from STDs to the microfabricated structures of micro-emitters.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3184948