Estimation of contact resistance in four terminal amorphous IGZO thin film transistor

Accurate electrical characterization of thin film transistor (TFT), requires measurement of its contact resistance. This work describes experimental extraction of contact resistance in top contact a-IGZO TFTs using a four-terminal structure. The auxiliary contact terminal is deposited adjacent to so...

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Bibliographic Details
Published in2021 International Semiconductor Conference (CAS) pp. 183 - 186
Main Authors Firoz, Nadeem, Singh, Shivam, Mazhari, B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 06.10.2021
Subjects
a-IGZO
Contact resistance
Current measurement
Resistance
Semiconductor device measurement
Semiconductor device modeling
TFT
Transmission line measurements
transmission-line model
Voltage measurement
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Summary:Accurate electrical characterization of thin film transistor (TFT), requires measurement of its contact resistance. This work describes experimental extraction of contact resistance in top contact a-IGZO TFTs using a four-terminal structure. The auxiliary contact terminal is deposited adjacent to source away from the channel region and kept electrically floating leading to unperturbed device operation. A simplified transmission-line model of source contact relates the open-circuit voltage measured at the floating terminal with the total resistance of the transistor to directly give estimates of the contact resistance. Contact resistance corrected values of threshold voltage and field-effect mobility were extracted as 4 V and 3.2 cm 2 V −1 s −1 respectively whereas the uncorrected values were 1 V and 2.4 cm2 V −1 s −1 .
ISSN:2377-0678
DOI:10.1109/CAS52836.2021.9604146