1.95-kV Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness

• Published in: IEEE transactions on power electronics Vol. 37; no. 2; pp. 1223 - 1227
• Main Authors: Zhou, Feng, Gong, Hehe, Xu, Weizong, Yu, Xinxin, Xu, Yang, Yang, Yi, Ren, Fang-fang, Gu, Shulin, Zheng, Youdou, Zhang, Rong, Ye, Jiandong, Lu, Hai
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.02.2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Anodes; Circuits; Commercialization; Conversion efficiency; Critical point; dynamic breakdown; Efficiency; Electric breakdown; Electric fields; Energy conversion efficiency; Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3; Gallium oxides; Heterojunctions; Hot roughing mills; Nickel oxides; NiO; Overvoltage; P-n junctions; Performance evaluation; Power electronics; Power factor; p–n heterojunction diode; Reliability analysis; Ruggedness; Silicon; Silicon carbide; Voltage control
• ISSN: 0885-8993; 1941-0107
• DOI: 10.1109/TPEL.2021.3108780

The technical progress of Ga 2 O 3 power diodes is now stuck at a critical point where a lack of performance evaluation and reliability validation at the system-level applications seriously limits their further development and even future commercialization. In this letter, by implementing beveled-mesa NiO/Ga 2 O 3 p-n heterojunction diodes (HJDs) into a 500-W power factor correction (PFC) system circuit, high conversion efficiency of 98.5% with 100-min stable operating capability has been demonstrated. In particular, rugged reliability is validated after over 1 million times dynamic breakdown with a 1.2-kV peak overvoltage. Meanwhile, superior device performance is achieved, including a static breakdown voltage (BV) of 1.95 kV, a dynamic BV of 2.23 kV, a forward current of 20 A (2 kA/cm 2 current density), and a differential specific on -resistance of 1.9 mΩ·cm 2 . These results indicate that Ga 2 O 3 power HJDs are developing rapidly with their own advantages, presenting the enormous potential in high-efficiency, high-power, and high-reliability applications.