Numerical Analysis to Determine the Temperature-Dependent Charge Transport in CNTFET

Carbon nanotubes are currently being evaluated as a potential replacement for conventional silicon technology. It has extraordinary electrical, thermal, and optical properties which intensify the interest of the researcher to develop carbon nanotube-based field-effect transistors. This paper demonst...

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Bibliographic Details
Published in2021 IEEE International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE) pp. 91 - 95
Main Authors Anjum, Nafisa, Ritu, Riffat Ara Islam, Adnan, Washik, Hasan, Md.Ittehad, Nayan, Md Faysal
Format Conference Proceeding
LanguageEnglish
Published IEEE 04.12.2021
Subjects
ballistic
Carbon nanotubes
Dielectric constant
Logic gates
Numerical simulation
Quantum computing
quantum tunneling
Temperature
threshold voltage
Voltage
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Summary:Carbon nanotubes are currently being evaluated as a potential replacement for conventional silicon technology. It has extraordinary electrical, thermal, and optical properties which intensify the interest of the researcher to develop carbon nanotube-based field-effect transistors. This paper demonstrates the electrical characteristics of CNTFETs based on a numerical simulation model. This study introduces the method of non-equilibrium mobile charge density to obtain the fast and efficient modeling of drain current. The analysis focuses on the input-output characteristics of carbon nanotube field-effect transistors (CNTFETs) considering ballistic conditions that are significantly influenced by various temperature and gate dielectric constants.
DOI:10.1109/WIECON-ECE54711.2021.9829666