Ultra-Low-Power Diodes Composed by SOI UTBB Transistors

The main objective of this work is to present an analysis of the performance of Ultra-Thin-Body and Buried Oxide transistors working as Ultra-Low-Power diodes. The implementation of different ground planes and substrate biases are analyzed. It is shown a reduced leakage current and increased ratio b...

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Bibliographic Details
Published in2022 IEEE Latin American Electron Devices Conference (LAEDC) pp. 1 - 4
Main Authors Costa, Fernando J., Trevisoli, Renan, Doria, Rodrigo T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 04.07.2022
Subjects
Electron devices
Leakage currents
SOI
Substrates
Threshold voltage
Transistors
Ultra-Low-Power Diodes
UTBB
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Summary:The main objective of this work is to present an analysis of the performance of Ultra-Thin-Body and Buried Oxide transistors working as Ultra-Low-Power diodes. The implementation of different ground planes and substrate biases are analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents for the Ultra-Low-Power diode with the N-substrate biased at −2V. However, this condition results in increased threshold voltage. The ground planes do not provoke a significant change in the leakage current, but a noticeable variation can be observed in the ratio between the on and off-state currents due to the higher threshold voltage in relation to the system without ground plane.
DOI:10.1109/LAEDC54796.2022.9908183