Experimental and simulation study of a high current 1D silicon nanowire transistor using heavily doped channels

The authors demonstrate a solution by exploiting the quantum effects of a 1-dimensional (1D) Si nanowire transistor (NWT). Whilst 1D devices have been produced in many material systems, here the authors demonstrate 1D nanowires in a scalable, top-down Si technology.

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Bibliographic Details
Published in2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) pp. 1 - 3
Main Authors Georgiev, Vihar P., Mirza, Muhammad M., Dochioiu, Alexandru-Iustin, Lema, Fikru-Adamu, Amoroso, Slavatore M., Towie, Ewan, Riddet, Craig, MacLaren, Donald A., Asenov, Asen, Paul, Douglas J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2016
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Summary:The authors demonstrate a solution by exploiting the quantum effects of a 1-dimensional (1D) Si nanowire transistor (NWT). Whilst 1D devices have been produced in many material systems, here the authors demonstrate 1D nanowires in a scalable, top-down Si technology.
DOI:10.1109/NMDC.2016.7777084