Roles of Oxygen in Crystalline GST and at the GST/TiAlN Interface

We present a first principles study of oxygen in crystalline Ge 2 Sb2Te 4 and at the Ge 2 Sb2Te 4 /TiAlN interface. We find that oxygen molecules dissolve and dissociate exothermically into all of the crystalline forms of GST. Furthermore, we find that interstitial oxygen atoms are strongly attracte...

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Bibliographic Details
Published in2007 Non-Volatile Memory Technology Symposium pp. 40 - 44
Main Authors Edwards, A.H., Pineda, A.C., Schultz, P.A.
Format Conference Proceeding
LanguageEnglish
Published 01.11.2007
Subjects
Adhesives
Bonding
Crystalline materials
Crystallization
Laboratories
Linear discriminant analysis
Nonvolatile memory
Optical films
Oxygen
Photonic band gap
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Summary:We present a first principles study of oxygen in crystalline Ge 2 Sb2Te 4 and at the Ge 2 Sb2Te 4 /TiAlN interface. We find that oxygen molecules dissolve and dissociate exothermically into all of the crystalline forms of GST. Furthermore, we find that interstitial oxygen atoms are strongly attracted to the crystalline GST/TiAIN interface, where they bond preferentially between germanium and aluminum atoms. We have calculated energies of adhesion and we predict that single oxygen atoms increase significantly the adhesion of the GST film to the the metal.
ISBN:1424413613
9781424413614
DOI:10.1109/NVMT.2007.4389942