Preliminary analysis of annealing impact on 1 eV GaNAsSb solar cells

• Published in: 2017 Spanish Conference on Electron Devices (CDE) pp. 1 - 4
• Main Authors: Lombardero, I., Ochoa, M., Garcia, I., Hinojosa, M., Cano, P., Rey-Stolle, I., Algora, C., Johnson, A., Davies, J. I., Tan, K. H., Loke, W. K., Wicaksono, S., Yoon, S. F., Romero, R., Gabas, M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.02.2017
• Subjects: annealing; dilute nitride; Gallium arsenide; Junctions; Molecular beam epitaxial growth; Photonic band gap; Photovoltaic cells; Rapid thermal annealing; solar cell
• DOI: 10.1109/CDE.2017.7905216

Impact of annealing temperature, time and process gas on 1 eV GaNAsSb solar cells is assessed. In situ and ex situ annealings are carried out in order to analyze their effect on the solar cell performance. Ex situ annealings on as grown samples using N 2 as process gas increase the external quantum efficiency while using H 2 as process gas degrades the solar cell performance. Best performance is obtained by in situ annealing in a molecular beam epitaxy reactor. External quantum efficiency increases in the short wavelength range (≤ 700 nm) and decreases in the long wavelength range (≥ 700 nm) after ex situ annealing using N 2 as process gas on in situ annealed samples (in a molecular beam epitaxy reactor).