X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of b...

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Bibliographic Details
Published in2008 IEEE Compound Semiconductor Integrated Circuits Symposium pp. 1 - 4
Main Authors Janssen, J., van Heijningen, M., Provenzano, G., Visser, G.C., Morvan, E., van Vliet, F.E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2008
Subjects
Aluminum gallium nitride
Broadband amplifiers
Gallium nitride
High power amplifiers
Low-noise amplifiers
MMICs
Noise measurement
Noise robustness
Semiconductor device measurement
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Summary:Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.
ISBN:1424419395
9781424419395
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2008.23