Measurements of the 12 nA low frequency oscillator

In this work, measurements of the two versions of the 12 nA Low Frequency Oscillator is presented. The circuit designed in a standard 0.6 μm MOS technology with most of the transistors operating in weak inversion, includes self-bias current and voltage references, and can be powered with a wide rang...

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Bibliographic Details
Published in2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) pp. 22 - 27
Main Authors Cayuela, Pablo O., Arnaud, Alfredo
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2015
Subjects
Analog Circuit Design
Current measurement
Frequency measurement
Integrated circuit modeling
MOS transistor
Oscillator
Oscillators
Temperature measurement
Transistors
Ultra Low Power Circuits
Voltage measurement
Weak Inversion
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Summary:In this work, measurements of the two versions of the 12 nA Low Frequency Oscillator is presented. The circuit designed in a standard 0.6 μm MOS technology with most of the transistors operating in weak inversion, includes self-bias current and voltage references, and can be powered with a wide range supply voltage from 1.2 to 5.0 V. The oscillator is intended as part of the next generation of portable or autonomous devices, powered by microbatteries or energy harvesting systems.
DOI:10.1109/EAMTA.2015.7237373