Interpretation of switching data in oxide resistive switching thin films

The overall research status of resistive switching thin films was reviewed in conjunction with patents in order to find a guideline for prospective commercial applications. Oxide resistive switching applications may be repositioned toward extreme devices such as reconfigurable logic. Further researc...

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Bibliographic Details
Published in2015 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF), International Symposium on Integrated Functionalities (ISIF), and Piezoelectric Force Microscopy Workshop (PFM) pp. 230 - 232
Main Authors Yoo, In K., Kim, Jong W., Kim, Kwon Y.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2015
Subjects
Commercialization
Computational materials design
Data driven materials design
Informatics
Materials informatics
Portfolios
Reconfigurable logic
Resistance
Resistive switching
RRAM
Switches
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Summary:The overall research status of resistive switching thin films was reviewed in conjunction with patents in order to find a guideline for prospective commercial applications. Oxide resistive switching applications may be repositioned toward extreme devices such as reconfigurable logic. Further research opportunities may be found in the field of the perfect conductor-insulator transition materials design by applying materials informatics.
ISSN:1099-4734
2375-0448
DOI:10.1109/ISAF.2015.7172713