VLSI processed InGaAs on Si MOSFETs with thermally stable, self-aligned Ni-InGaAs contacts achieving: Enhanced drive current and pathway towards a unified contact module

• Published in: 2013 IEEE International Electron Devices Meeting pp. 2.6.1 - 2.6.4
• Main Authors: Lee, Rinus T. P., Hill, R. J. W., Loh, W.-Y, Baek, R.-H, Deora, S., Matthews, K., Huffman, C., Majumdar, K., Michalak, T., Borst, C., Hung, P. Y., Chen, C.-H, Yum, J.-H, Kim, T.-W, Kang, C. Y., Wei-E Wang, Kim, D.-H, Hobbs, C., Kirsch, P. D.
• Format: Conference Proceeding Journal Article
• Language: English
• Published: IEEE 01.12.2013
• Subjects: Devices; Indium gallium arsenide; Integrated circuits; Logic gates; Modules; MOSFETs; Nickel; Resistance; Silicon; Silicon germanides; Thermal stability; Very large scale integration
• ISSN: 0163-1918; 2156-017X
• DOI: 10.1109/IEDM.2013.6724546

Parasitic resistance (R para ) is a grand challenge to successfully hetero-integrate III-V channels onto Si for CMOS application. Here, we report the first statistical I Dsat comparison for non-self-aligned and self-aligned contacts of In 0.53 Ga 0.47 As MOSFETs fabricated on large scale Si substrates with VLSI toolsets. We compare non-self-aligned Mo and self-aligned Ni-InGaAs contacts. Devices with self-aligned contacts exhibit a 25% enhancement in I Dsat over devices with non-self-aligned contacts largely due to the 27% reduction in R para . We have also extended the thermal stability of Ni-InGaAs to 500 °C (highest reported) enabling it to be compatible with BEOL processes. The impact of the Ni-InGaAs process module on tool contamination is discussed. These results represent significant progress towards establishing a path to a unified Ni-based S/D contact module for Si/SiGe/Ge/III-V co-integration on VLSI platforms.