VLSI processed InGaAs on Si MOSFETs with thermally stable, self-aligned Ni-InGaAs contacts achieving: Enhanced drive current and pathway towards a unified contact module
Parasitic resistance (R para ) is a grand challenge to successfully hetero-integrate III-V channels onto Si for CMOS application. Here, we report the first statistical I Dsat comparison for non-self-aligned and self-aligned contacts of In 0.53 Ga 0.47 As MOSFETs fabricated on large scale Si substrat...
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Published in | 2013 IEEE International Electron Devices Meeting pp. 2.6.1 - 2.6.4 |
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Main Authors | , , , , , , , , , , , , , , , , , , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
IEEE
01.12.2013
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Subjects | |
Online Access | Get full text |
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Summary: | Parasitic resistance (R para ) is a grand challenge to successfully hetero-integrate III-V channels onto Si for CMOS application. Here, we report the first statistical I Dsat comparison for non-self-aligned and self-aligned contacts of In 0.53 Ga 0.47 As MOSFETs fabricated on large scale Si substrates with VLSI toolsets. We compare non-self-aligned Mo and self-aligned Ni-InGaAs contacts. Devices with self-aligned contacts exhibit a 25% enhancement in I Dsat over devices with non-self-aligned contacts largely due to the 27% reduction in R para . We have also extended the thermal stability of Ni-InGaAs to 500 °C (highest reported) enabling it to be compatible with BEOL processes. The impact of the Ni-InGaAs process module on tool contamination is discussed. These results represent significant progress towards establishing a path to a unified Ni-based S/D contact module for Si/SiGe/Ge/III-V co-integration on VLSI platforms. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Conference-1 ObjectType-Feature-3 content type line 23 SourceType-Conference Papers & Proceedings-2 |
ISSN: | 0163-1918 2156-017X |
DOI: | 10.1109/IEDM.2013.6724546 |