Design of low loss crossing of Si waveguides

A novel waveguide crossing structure is proposed, where Si waveguides are tapered off at the crossing. Two-dimensional finite difference time domain simulation indicates that the presented crossing have low insertion loss of 0.01dB/crossing around 1550nm.

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Bibliographic Details
Published in2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) Vol. 1; pp. 1 - 2
Main Authors Yugao Deng, Ziyi Zhang, Kawai, Motoki Yako Naoyuki J., Wada, Kazumi
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2015
Subjects
Crosstalk
Insertion loss
Optical losses
Optical ring resonators
Optical switches
Optical waveguides
Silicon
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Summary:A novel waveguide crossing structure is proposed, where Si waveguides are tapered off at the crossing. Two-dimensional finite difference time domain simulation indicates that the presented crossing have low insertion loss of 0.01dB/crossing around 1550nm.
DOI:10.1109/CLEOPR.2015.7375915